Graphene transistors – good-bye to silicon technology

The silicon transistors seem to become overrated and a new technology is taking place. The graphite consists of many graphene sheets stacked together. Graphene is a planar sheet thick as an atom. It is formed from a honeycomb crystal lattice of densely packed sp2-bounded carbon atoms. Also is ideal for high-speed operation because of electron mobility, 100 times greater than silicon. Graphene can be controlled switching its forms as conductor, semiconductor and electrically insulation. In a very near future, devices may work based just on graphene.

One of IBM’s researching prove graphene-based FETs operate at higher speeds than silicon-based FETs, tens or even 100 GHz speed. Increasing the operating frequency, there isn’t much time for silicon electrons to respond to the electrical fields, so is not reliable for conducting across the material to high speeds. Through the same study, silicon devices proved to function not higher than 30 GHz, instead of graphene FETs operating above this limit and almost to 100 GHz.

Even if we have to wait until graphene will have applicability, the study reveals that wafer-scale production of graphene-based transistors is possible and already is threatening silicon transistors.

One Response to “Graphene transistors – good-bye to silicon technology”

  1. Sjukosev says:

    Пожалуй, соглашусь. Хотя свои нюансы здесь есть. Полезная информация. Воспользуюсь.

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